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机构地区:[1]State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dedian University of Technology, Dedian 116024, China [2]Department of Mathematic and Physics, Dalian Nationality University, Dalian 116600, China
出 处:《Chinese Physics B》2007年第9期2809-2813,共5页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China (Grant No 10405005).
摘 要:The kinetic energy of ions in dielectric barrier discharge plasmas are analysed theoretically using the model of binary collisions between ions and gas molecules. Langevin equation for ions in other gases, Blanc law for ions in mixed gases, and the two-temperature model for ions at higher reduced field are used to determine the ion mobility. The kinetic energies of ions in CH4 + Ar(He) dielectric barrier discharge plasma at a fixed total gas pressure and various Ar (He) concentrations are calculated. It is found that with increasing Ar (He) concentration in CH4 + Ar (He) from 20% to 83%, the CH4+ kinetic energy increases from 69.6 (43.9) to 92.1 (128.5)eV, while the Ar+ (He+) kinetic energy decreases from 97 (145.2) to 78.8 (75.5)eV. The increase of CH4+ kinetic energy is responsible for the increase of hardness of diamond-like carbon films deposited by CH4 + Ar (He) dielectric barrier discharge without bias voltage over substrates.The kinetic energy of ions in dielectric barrier discharge plasmas are analysed theoretically using the model of binary collisions between ions and gas molecules. Langevin equation for ions in other gases, Blanc law for ions in mixed gases, and the two-temperature model for ions at higher reduced field are used to determine the ion mobility. The kinetic energies of ions in CH4 + Ar(He) dielectric barrier discharge plasma at a fixed total gas pressure and various Ar (He) concentrations are calculated. It is found that with increasing Ar (He) concentration in CH4 + Ar (He) from 20% to 83%, the CH4+ kinetic energy increases from 69.6 (43.9) to 92.1 (128.5)eV, while the Ar+ (He+) kinetic energy decreases from 97 (145.2) to 78.8 (75.5)eV. The increase of CH4+ kinetic energy is responsible for the increase of hardness of diamond-like carbon films deposited by CH4 + Ar (He) dielectric barrier discharge without bias voltage over substrates.
关 键 词:ion energy dielectric barrier discharge diamond-like carbon deposition
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