提高电子注入的固态阴极射线发光的研究  

Reseach on improving the electron injection in SSCL

作　　者：李远[1] 赵谡玲[1] 徐征[1] 张福俊[1] 黄金昭[1] 宋林[1] 欧阳平[1] 

机构地区：[1]北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京100044

出　　处：《物理学报》2007年第9期5526-5530,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(973)项目(批准号:2003CB314707);国家高技术研究发展计划(863)(批准号:2006AA03Z0412);国家自然科学基金(批准号:60576016;10434030);北京市自然科学基金(批准号:2073030)资助的课题.~~

摘　　要：设计了SiO2与电极间加入ZnS的复合加速层结构,进一步说明靠电子注入的增强来扩大初电子源.同时,在电子发生倍增前后的电压下,对比了单层和夹层结构的不同加速层的发光性能.得到在低压直流下单侧复合加速层器件的发光优于单层SiO2加速层器件而劣于单层ZnS器件;在高压交流下复合加速层表现出明显的优势,在复合加速层中,ZnS不仅对电子有加速作用,而且对增强电子注入贡献很大,同时ZnS和SiO2/ZnS界面还提供了初电子源.另外,与SiO2夹层器件作对比,发现SiO2依然是主要的加速层,只是在加入ZnS以后,改变了电场分布,提高了电子的加速效果,增强了短波峰的光强.这种复合加速层结构,尤其在高场下,对提高固态阴极射线的初电子源,从而提高其发光效率具有促进作用.The key to improve the efficiency of SSCL （solid state cathodoluminescence） is to improve the injection and acceleration of electrons in the accelerating layer. The electron acceleration ability of SiO is better than that of ZnS,while the latter is better than the former in the ability of injecting charges. So our attention was turned to the complex accelerating layer SiO2/ZnS,and prepared two kinds of devices to see whether the short peak occurrs. One of them is the low voltage mono-side recombination device, the othe the high voltage impacted two-side device. In result,under low voltage,the performance of the complex accelerating layer is superior to that of SiO2 and inferior to that of ZnS. Under high voltage,the complex accelerating layer is the best of all devices. Meanwhile,SiO2 was still found to be the main accelerating layer,yet ZnS is very useful for improving the performance in electron injection of SSCL device.

关 键 词：电致发光 复合加速层 过热电子 固态阴极射线 

分 类 号：O462[理学—电子物理学]