GaN基双波长发光二极管电致发光谱特性研究  

The electroluminescence spectra of dual wavelength GaN-based light emitting diodes

作　　者：顾晓玲[1] 郭霞[1] 梁庭[1] 林巧明[1] 郭晶[1] 吴迪[1] 徐丽华[1] 沈光地[1] 

机构地区：[1]北京工业大学北京市光电子技术实验室,北京100022

出　　处：《物理学报》2007年第9期5531-5535,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:2006CB604902);国家自然科学基金(批准号:60506012);国家高技术研究发展计划(批准号:2006AA03A121)资助的课题.~~

摘　　要：通过同时调节同一有源区内不同阱层和垒层的In组分,制备了GaN基单有源区蓝、绿光双波长发光二极管(LED).实现了20mA下蓝、绿光同时发射.实验发现随注入电流由10mA增大到60mA,电致发光(EL)谱中绿光峰强度相对于蓝光峰强度不断增强,峰值波长蓝移也更加明显.同时考虑极化效应和载流子不均匀分布的影响,通过对一维薛定谔方程、稳态速率方程和泊松方程的联立自洽求解.分析了测试电流下蓝、绿光EL谱峰值波长和功率的变化情况.发现理论结果与实验结果有很好地符合.GaN-based dual-wavelength light emitting diodes （LEDs） with different In contents in the wells and barriers was designed and fabrieated in our experiment. Electroluminescence of the fabricated LED at the typical driving current of 20？mA has two colors,blue and green respectively. The ratio of the intensities of the green light to the blue light increases with increasing driving current. At larger current,the blue shift of the peak wavelength of the green light was greater than that of the blue light. We are also concerned with the effect of polarization and non-uniform carrier distribution in the active region. Using coupled method of simulation,the calculated data were consistent with the experiment.

关 键 词：极化 载流子不均匀分布 双波长 

分 类 号：O433[机械工程—光学工程] TN312.8[理学—光学]