硅烷流量对硅烷热CVD法制备纳米硅粉的影响  

The Effect of Silane Flow Rate on Nano-Silicon Powder Production by Silane Thermal CVD

作　　者：汪新颜[1] 金达莱[1] 马照军[1] 王勇[1] 姚奎鸿[1] 

机构地区：[1]浙江理工大学材料工程中心,杭州310018

出　　处：《浙江理工大学学报（自然科学版）》2007年第5期545-548,共4页Journal of Zhejiang Sci-Tech University(Natural Sciences)

基　　金：浙江理工大学博士启动基金(0403054-Y);浙江省教育厅资助项目(20040387)

摘　　要：纳米硅粉的制备方法很多,但采用硅烷(SiH4)热CVD法制备纳米硅粉较于其它方法有很多优势。文章研究了在特定的温度和压力下硅烷流量对硅粉制备的影响,并对制得的硅粉进行XRD、SEM和粒径分析表征,从而获得硅烷热CVD法制备硅粉一些关于硅烷流量等关键控制参数,为该法多参数优化控制以及将来的大规模工业应用做准备。There are many different kinds of methods to produce nano-silicon powder. Compared to these methods, method of thermal CVD has many advantages. It is successfully synthesized with this method. The effect of silane flux on nano-silicon powder production is studied. Tl^e silicon powder was characterized by XRD, SEM, LASER PARTICLE SIZE ANALYZER, which is produced under condition of certain temperature and pressure with the change of flux. The optimal processing parameter is obtained and will be helpful in large scale industry application.

关 键 词：硅烷 热CVD 流量 硅粉 

分 类 号：TB383[一般工业技术—材料科学与工程]