某单晶硅辐照系统辐射防护评价  

Radiation Protection Assessment of Silicon Irradiation System

作　　者：谷振军[1] 张一云[2] 徐显启[1] 张之华[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,绵阳621900 [2]四川大学物理科学与技术学院,成都610064

出　　处：《辐射防护通讯》2007年第3期8-11,共4页Radiation Protection Bulletin

摘　　要：单晶硅经反应堆中子场辐照后,具有了活化放射性,在单晶硅转运出反应堆及暂存过程中对操作人员构成外照射危害。本文根据某反应堆单晶硅辐照系统技术参数,计算了辐照后样品的活化活度,以及操作人员所在处的周围剂量当量水平,并提出了优化辐照工艺流程和操作的建议。After being irradiated by neutrons in reactor, single crystal silicon was activated in radioactivity and poses danger to workers in the process of being transferred from reactor for storage. According to technical parameters of a silicon irradiation system, the sample activity and surrounding dose level are calculated, with suggestions of how to optimize design and operation given as well.

关 键 词：单晶硅辐照 活化活度 屏蔽 周围剂量当量 

分 类 号：TL71[核科学技术—辐射防护及环境保护]