添加CeO_2对BZN和BMZN微波陶瓷介电性能的影响  

Effect of CeO_2 Doping on the Dielectric Properties of BZN and BMZN Microwave Ceramics

作　　者：熊兆贤[1] 肖芬[1] 程珊珊[1] 邱虹[1] 

机构地区：[1]厦门大学,福建厦门361005

出　　处：《稀有金属材料与工程》2007年第A01期523-526,共4页Rare Metal Materials and Engineering

基　　金：国家863计划项目(2001AA325100);厦门大学"创新基金"项目(K70009)

摘　　要：添加CeO2对BZN和BMZN微波陶瓷介电性能的影响表明,引入CeO2对BZN和BMZN陶瓷密度和微观形貌没有明显的影响,也不易造成第二相的形成;添加适量的CeO2能调节BZN和BMZN陶瓷的谐振频率温度系数在-10-5/℃-+10-5/℃之间;CeO2对BZN陶瓷Qf值的影响不大,但会使BMZN陶瓷的Of值明显降低;考虑电容率、Qf值和谐振频率温度系数三方面因素,获得较好性能的BZN和BMZN陶瓷性能如下:BZN+0.75%CeO2,εr=39.45,Qf=51201GHz,τt=8.20×10-6/℃:BMZN+0.50%CeO2,εr=40.48,Qf=51381GHz,τf=12.7×10-6/℃。Effect of CeO2 doping on the properties of BZN and BMZN microwave ceramics were investigated. The ceramic density and microstructure were not influenced by the doping of CeO2. However, the temperature coefficient of resonant frequency could be suitably adjusted by the doping, from -10^-5/℃ into ＋10^-5/℃. There was almost no effect for BZN ceramics but lowing the value of Qf for BMZN ceramics with the doping of CeO2.

关 键 词：微波陶瓷 介电性能 介电常数 介质损耗 谐振频率温度系数 

分 类 号：TQ174.75[化学工程—陶瓷工业]