热压合成C-B_4C(TiB_2)-SiC复合材料的氧化行为  

Oxidation Behaviors of C-B_4C(TiB_2)-SiC Composites Prepared by Hot Pressing

作　　者：喻亮[1] 茹红强[1] 薛向欣[1] 左良[1] 

机构地区：[1]东北大学材料与冶金学院,辽宁沈阳110004

出　　处：《稀有金属材料与工程》2007年第A01期742-746,共5页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助项目(50372010)

摘　　要：以1950℃下原位合成热压烧结生成的C-B4C(TiB2)-SiC复合材料在600℃,800℃,1000℃,1200℃,1400℃空气中的恒温氧化行为,TG/DTA实验为基础,结合材料的显微结构,研究了不同温度区间复合材料在静态空气中的氧化机理,计算出氧化反应激活能,并对氧化层表面的相组成形貌以及氧化层剖面的显微组织进行了分析。结果表明该复合材料的氧化动力学曲线主要为抛物线形。扫描电镜照片显示氧化剖面层分成3层,不同的氧化温度,其表面氧化膜有不同的缺陷。Based on the isothermal oxidation at 600℃, 800℃, 1000℃, 1200℃ and 1400℃ of C-B4C（TiB2）-SiC composite sintered by in-situ synthesis at 1950℃, TG/DTA curves and the fine textures of the composite, the oxidation mechanism of the composite in static air at different temperature range was studied. The oxidation reaction activation energy was calculated, and the phase constitution of the surface oxidizing layer, pattern, and the microscopic structure of the oxide on cross-section were analyzed. The results showed the oxidation kinetic curve of the composite is parabola. The oxide on cross-section is three layers showed by SEM, and the different flaws of the surface oxidation film appear at different oxidation temperatures.

关 键 词：C—B4C(TiB2)-SiC复合材料 原位合成 显微结构 氧化机理 氧化膜 

分 类 号：TB33[一般工业技术—材料科学与工程]