金属颗粒-半导体膜Cu:CdS的制备及结构研究  

THE PREPARATION AND MICROSTRUCTURE STUDY OF NANO METAL SEMICONDUCTOR FILM Cu∶CdS

作　　者：赵子强[1] 韦伦存[1] 王浩[1] 张金宏 钟运成 卢希庭[1] 

机构地区：[1]北京大学技术物理系重离子物理研究所

出　　处：《物理学报》1997年第5期878-882,共5页Acta Physica Sinica

基　　金：国家自然科学基金;国家教育委员会优秀青年教师基金

摘　　要：利用磁控溅射产生金属Ｃｕ团簇，同时蒸发半导体介质ＣｄＳ，将Ｃｕ团簇包埋在ＣｄＳ介质中，制备出金属颗粒半导体膜．团簇大小可通过改变溅射气压控制．用ＴＥＭ研究了嵌埋团簇的结构．分析表明：ＣｄＳ很好地包埋了Ｃｕ团簇，都呈多晶结构；团簇尺寸在５—２０ｎｍ，Ｃｕ晶格发生了膨胀。By using magnetic controlled sputtering of atoms and evaporating insulator medium, Cu clusters embedded in CdS, a metal semiconductor film Cu∶CdS has been successfully prepared. TEM is used in studying the microstructure of Cu clusters embedded in the medium CdS. The copper cluster is well embedded in CdS. The size of the triangle shaped grains, Cu clusters, is from 5nm to 20nm. The Cu cluster and medium CdS are both of polycrystalline structures. And the Cu cluster′s lattice constant expands by about 7%.

关 键 词：金属颗粒 半导体 薄膜制备 铜 砷化镉 

分 类 号：TN304.22[电子电信—物理电子学] TN304.055