HgCdTe探测器Pt电阻测温分析  

Analysis of temperature measurement by Pt resistance in HgCdTe detector

作　　者：王飞[1] 程湘爱[1] 

机构地区：[1]国防科技大学光电学院定向能技术研究所,湖南长沙410073

出　　处：《红外与激光工程》2007年第4期461-463,466,共4页Infrared and Laser Engineering

摘　　要：研究了PV型HgCdTe探测器在1.319μm连续激光辐照下的温升效应。根据探测器的分层结构及测温Pt电阻的位置(冷面上),推断Pt电阻测得的温度并不直接反映HgCdTe芯片的温度,而是比芯片温度低很多。实验测量了Pt电阻的温升,数值模拟了Pt电阻温度随时间的变化以及探测器各层结构的温升情况,理论分析结果与实验结果相一致。The temperature raise phenomenon of PV-type HgCdTe detector under 1.319μm CW-laser is studied. According to the layer structure of PV-type HgCdTe detector and the exact position of Pt resistor （on the cold face）, it can be deduced that the temperature of Pt resistor isn＇t the temperature of the HgCdTe chip. Actually,the temperature of Pt resistor is much lower than the chip temperature. The changing of temperature on Pt resistor is tested and simulated, also the changing of temperature of detector made of multilayer. Consistent conclusion can be made between theoretic analysis and experimental results.

关 键 词：PV型HgCdTe探测器 温升 杜瓦冷面 Pt电阻 1.319 μm连续激光 

分 类 号：TN304.2[电子电信—物理电子学]