磁控溅射SiGe异质结的薄膜分析  

Analysis on the films of SiGe heterostructure prepared by magnetron sputtering

作　　者：王辉[1] 杨型健[1] 刘淑平[1] 

机构地区：[1]太原科技大学应用科学学院,山西太原030024

出　　处：《红外与激光工程》2007年第4期464-466,共3页Infrared and Laser Engineering

基　　金：山西省自然科学基金项目(200330)

摘　　要：膜层生长不均匀是制备SiGe异质结的研究热点。采用射频磁控溅射方法,通过不断改变溅射时的实验参数,寻找能使Ge纳米薄膜在Si基片上均匀生长的溅射实验条件。实验中,在不同时间条件下分别制备了三种纳米Ge薄膜,通过原子力显微镜对其微观形貌的分析扫描,可以观察到纳米薄膜生长过程中的四个典型阶段,发现Ge/Si的共度生长取得了较好的结果,为SiGe异质结的进一步制备研究奠定了一定的实验基础。The homogeneity of film is a focus of preparation of SiGe heterostructure, This experiment attempts to find the suitable conditions, through changing different factors of RF magnetron sputtering. Finally, the nano Ge thin film deposited under three different time codintions, is scanned by AFM.It is found that the film is uniform, and the growth of the film has four phase. The result has important meaning to coming preparation of SiGe heterostructure.

关 键 词：异质结 射频磁控溅射 纳米Ge薄膜 

分 类 号：TN076[电子电信—物理电子学]