GMM,PZT和弹性基板复合磁电耦合效应研究  

Research on Magnetoelectric Effect of GMM and PZT Bonded on an Elastic Substrate

作　　者：卞雷祥[1] 文玉梅[1] 李平[1] 程磊[1] 刘盼刚[1] 

机构地区：[1]重庆大学光电技术及系统教育部重点实验室,重庆400044

出　　处：《微纳电子技术》2007年第7期43-44,55,共3页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划资助项目(863项目)(2006AA04Z337);国家自然科学基金资助项目(60374045;50677072);国家教育部博士点基金资助项目(20060611029);重庆市科委自然科学基金计划资助项目

摘　　要：将超磁致伸缩材料(GMM)、压电材料(PZT-5H)复合于弹性基板上,利用共振原理构造了一种新型的磁电换能器。当激励磁场的频率等于或者接近于弹性基板的固有频率时,GMM将驱动弹性基板振动并发生共振,粘结于基板上的压电材料的输出电压将达到极大。实验研究表明,该器件的磁电耦合电压曲线呈现多个峰值,在800Oe偏置磁场和1Oe交变磁场激励下,谐振点处的磁电耦合电压系数达到1.552V/Oe。The megnetoelectric （ME） effect of giant magnetostrictive material （GMM, Tb1-x DyxFe2-y） and piezoelectric material （Pb（Zr1-xTix）O3, PZT-5H） bonded on an elastic substrate was reported. The developed device takes advantage of resonance. The substrate resonance oc- curs when the GMM plate oscillates at frequencies near the natural frequencies of the substrate, producing a much greater response to finite AC magnetic field input. The device exhibits an attractive and promising performance that its response to AC magnetic field demonstrates multiple peaks over frequency. This attributes to the multiple vibrational modes of the elastic substrate. And the maximum ME voltage coefficient achieves 1. 552 V/Oe at resonance from an excited magnetic field 1 Oe superimposed with a bias field 800 Oe.

关 键 词：磁电耦合效应 磁致伸缩材料 压电材料 

分 类 号：O482[理学—固体物理] O487[理学—物理]