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出 处:《微纳电子技术》2007年第7期80-82,共3页Micronanoelectronic Technology
基 金:非磁激励庞磁电阻效应型不挥发存储器研究(90407013)
摘 要:采用脉冲激光沉积技术在SrTiO3(001)单晶衬底上制备出钙钛矿结构La0.67Sr0.33MnO3薄膜,利用X射线衍射仪与原子力显微镜表征其晶体结构与微观形貌,并对Ag/La0.67Sr0.33MnO3/SrTiO3结构的室温电脉冲诱发可逆变阻效应进行了分析讨论。该效应表现出良好的非挥发多值存储特性,有望应用于新型存储器、传感器、可变电阻等电子元器件的研制。The perovskite La0.6:Sr0.33 MnO3 thin film was grown by pulsed laser deposition on SrTiO3 (001) single crystal substrate. Using X-ray diffraction (XRD) and atom force microscope (AFM) ,the orientation and surface morphology analysis of the film were characterized. A novel electric-pulse-induced reversible resistance change effect at room temperature in Ag/La0.6:Sr0.33 MnO3/SrTiO3 structure was discussed. It shows good performances of nonvolatility and multilevel storage, and will be used in the development of new kinds of electronic devices, such as random access memories, sensors and variable resistances.
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