一种用于CMOS图像传感器的新结构光电器件  

A New Structure Photoelectric Device for CMOS Image Sensor

作　　者：李晓磊[1] 曾云[1] 张燕[1] 王太宏[1] 

机构地区：[1]湖南大学微电子研究所

出　　处：《半导体光电》2007年第4期487-489,共3页Semiconductor Optoelectronics

基　　金：湖南省自然科学基金资助项目(05JJ30115)

摘　　要：提出了一种用于CMOS图像传感器的新结构光电探测器件——双极光栅场效应晶体管。通过在器件中引入pn结,有效地增加了光生电荷的读出速率,因而与传统光栅晶体管相比,双极光栅晶体管具有工作速度快、响应灵敏度高、读出电路简单等优点。A new photo detector-bipolar photo gate field-effect transistor for CMOS image sensor is presented and its analytical model is also established. Due to a pron junction introduced, the new device can increase the photo-charges＂ readout rate. Thus compared with traditional photo gate transistor, the bipolar photo gate transistor has numerous advantages of quick working speed, high respond sensitivity and simple readout circuit.

关 键 词：CMOS图像传感器 光电探测器 双极光栅场效应晶体管 响应灵敏度 

分 类 号：TN36[电子电信—物理电子学]