两种制备多晶铜铟硒薄膜方法的比较  

Comparison of Two Methods Fabricating CuInSe_2 Polycrystalline Films

作　　者：林飞燕[1] 秦娟[1] 徐环[1] 史伟民[1] 魏光普[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《半导体光电》2007年第4期528-530,共3页Semiconductor Optoelectronics

基　　金：上海高校选拔培养优秀青年教师科研专项基金项目;上海市科委重点资助项目(03DZ12033)

摘　　要：采用真空顺序蒸发铜铟金属预置层后真空硒化退火的方法(硒化法),以及真空三元叠层蒸发后氮气气氛退火的方法(叠层法)分别制备了太阳电池吸收层材料CuInSe2薄膜。通过X射线衍射、扫描电子显微镜、能量色散X射线分析技术等分析手段对薄膜进行了表征。结果表明:两种方法制备的薄膜形貌都比较致密均匀,晶粒直径分别约1.5μm和约1μm。组分分析表明所制薄膜均为富铜CIS。硒化法制备的CIS薄膜具有单一的黄铜矿相结构;而叠层法制备的薄膜含有少量杂相,如-βIn2Se3等。因此硒化法制备的薄膜更适于作为太阳能吸收层材料。The CulnSe2 （CIS） films were fabricated by selenization of evaporated metallic precursors and vacuum evaporation of stacked elemental layers （SEL） followed by a thermal annealing step. The morphology, microstructure and composition of the films were investigated by scanning electron microscopy （SEM）, X-ray diffraction （XRD） and energy dispersive X-ray spectroscopy （EDX）. The results show that these two thin films are both compact and uniform. The grain sizes of the two kinds of films are 1.5μm and 1.0μm,respectively. All the films made by the two methods are Cu-rich and show p-type conduction. However, the CIS thin films fabricated by the former method consist of a single phase of chalcopyrite structure, while those films fabricated by the later method contain impurity phases such as β-In2Se3 besides CIS phase. Thus the former method is better for fabricating the CIS absorber in solar cells.

关 键 词：铜铟硒 薄膜太阳电池 真空蒸发法 硒化法 

分 类 号：TM615[电气工程—电力系统及自动化]