4H-SiC BJT的Early电压分析  

Analysis of Early Voltage in 4H-SiC BJTs

作　　者：韩茹[1] 李聪[1] 杨银堂[1] 贾护军[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2007年第9期1433-1437,共5页半导体学报（英文版）

基　　金：教育部重点科技(批准号:02074);国家部委预研(批准号:513080302)资助项目~~

摘　　要：通过考虑缓变基区4H-SiC BJT电流增益及器件内4种载流子复合过程,计算了4H-SiC BJT的厄利(Early)电压,分析了Early电压及电流增益的温度特性.结果表明,其他参数不变时,Early电压VA随发射区掺杂浓度NE增大而增大,随集电区掺杂浓度NC增大而减小,随基区宽度W增大而增大.SiC中杂质非完全离化会影响4H-SiCBJT的Early电压及电流增益的温度特性.The Early voltage of 4H-SiC BJT,which has an exponential impurity profile in the base,is calculated, taking into account the current gain of the device and four recombination processes in the device. The effects of temperature on the Early voltage and the current gain of the 4H-SiC BJT are investigated. Simulation results show that, keeping the other parameters unchanged,the Early voltage increases with NE （emitter doping density） ,and decreases when Nc （collector doping density） increases and W （base width） decreases. The incomplete ionization of the impurities in 4H-SiC can affect the temperature dependences of the Early voltage and current gain.

关 键 词：碳化硅双极晶体管 Early电压 共射极电流增益 温度 

分 类 号：TN386[电子电信—物理电子学]