溅射工艺条件对TbFeCo/Pt薄膜磁性能的影响  

Effect of sputtering technology on the magnetic properties of TbFeCo/Pt thin films

作　　者：程伟明[1] 李佐宜[1] 胡珊[2] 杨晓非[1] 董凯锋[1] 林更琪[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]中国地质大学(武汉)材料科学与化学工程学院,湖北武汉430074

出　　处：《功能材料》2007年第9期1431-1433,共3页Journal of Functional Materials

基　　金：国家自然科学基金重大资助项目(60490290);国家自然科学基金资助项目(60571010)

摘　　要：采用射频磁控溅射法在玻璃基片上成功制得了TbFeCo/Pt非晶垂直磁化膜,系统研究了溅射工艺参数对TbFeCo薄膜磁性能的影响。振动样品磁强计测量结果表明:Tb含量在补偿成分点附近,采用较低的溅射氩气压与Pt底层,有利于提高TbFeCo薄膜的磁性能;当Tb含量为0.24,溅射功率为300W,溅射气压为0.53Pa,薄膜厚度为140nm时,TbFeCo/Pt薄膜矫顽力达到476kA/m,饱和磁化强度为151kA/m,剩磁矩形比超过0.8,该薄膜有望用作高密度光磁混合记录介质。TbFeCo/Pt amorphous perpendicular magnetization films were prepared onto glass substrate by RF magnetron sputtering and the effect of the conditions of sputtering technology on the magnetic properties of TbFeCo/Pt films was investigated. The measurement results of vibrating sample magnetometer show that the Tb content near the compensation,low sputtering pressure and adopting Pt underlayer can increase the magnetic properties of TbFeCo films. While the Tb atomic concentration is 0.24,the sputtering power is 300W,the sputtering pressure is 0. 536Pa and the films thickness is 140nm,the coercivity attains 476kA/m,the saturation magnetization reaches 151kA/m and the remanence square exceeds 0.8. These results indicate TbFeCo / Pt films can be used as high density hybrid recording media.

关 键 词：射频磁控溅射 非晶垂直磁化膜 矫顽力 饱和磁化强度 光磁混合记录 

分 类 号：TM271[一般工业技术—材料科学与工程]