聚3-甲基噻吩修饰CdSe纳米棒复合膜电极光电化学性能研究  

Photoelectrochemical Studies of PMeT Modified CdSe Nanorods Composite Film Electrode

作　　者：郝彦忠[1] 殷志刚[2] 

机构地区：[1]河北科技大学理学院 [2]河北科技大学化学与制药工程学院,河北石家庄050018

出　　处：《高分子材料科学与工程》2007年第5期218-222,共5页Polymer Materials Science & Engineering

基　　金：国家自然科学基金资助项目(20573031);国家自然科学基金资助项目(20203008);河北省自然科学基金资助项目(202351);河北省教育厅指导性项目资助(Z2005203)

摘　　要：采用水热法制备了具有闪锌矿和纤维锌矿结构的CdSe纳米棒,纳米棒直径约100 nm,长度约300nm。当电极电势为-0.7 V时聚3-甲基噻吩(PMeT)修饰CdSe纳米棒有最大光电流。CdSe纳米棒/PMeT中存在p-n异质结,p-n异质结存在使得CdSe纳米棒/PMeT复合膜电极在长波区光电流高于CdSe纳米棒薄膜电极光电流。CdSe nanorods were prepared by hydrothermal method. The CdSe nanorods were formed with the diameter about 100 nm and the length about 300 nm. The photoelectrochemical properties of the CdSe nanorods/PMeT composite film electrode were investigated. The results show that the maximum value of photocurrent appears at the --0.7 V electrode potential. The pn heterojunction is existed in the CdSe/PMeT composite film electrode. The photocurrent of PMeT modified CdSe nanorod is higher than that of CdSe film electrode in long wavelength region.

关 键 词：CdSe/PMeT复合膜电极 光电化学 导电聚合物 

分 类 号：O644[理学—物理化学]