高性能实用化GaInP-AlGaInP半导体量子阱可见光激光器  

GaInP-AlGaInP Quantum Well Visible Laser

作　　者：熊飞克[1] 郭良[1] 马骁宇[1] 王树堂[1] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1997年第6期424-430,共7页半导体学报（英文版）

基　　金：国家"863"高技术计划资助

摘　　要：用低压MOVPE方法研制出了波长为650nm与670nm的GaInP－AlGaInP半导体量子阱可见光激光器，并已形成一定批量生产能力，批量生产的670nm与650nm半导体量子阱可见光激光器的阈值电流典型值为35mA，额定输出光功率不小于5mw，标称工作温度不低于50℃，预计20℃时寿命接近100000小时，主要技术指标达到目前进口同类产品水平，完全可以满足实用要求。GaInP-AlGaInP quantum well visible laser diodes with wavelength of 650nm and 670nm have been successfully developed. A biaxial compressive strain is employed in GaInP well to lower threshold current. The typical threshold current of the laser diode is about 35mA(25℃, CW). The lowest threshold current is 13mA. The minimum operating current and operating voltage at the CW output of 5mW are 23mA and 2. 15V respectively, which results in a marked reduction of power consumption. A maximum CW temperature of 100℃ (670nm)and maximum output power of 22mW have been realized. Estimated lifetimes of more than 10,000h were obtained at 3mW, 25℃.

关 键 词：激光器 半导体激光器 量子阱 可见光 

分 类 号：TN248.4[电子电信—物理电子学]