硅光探测器紫外响应的改善  

Improvement of Ultraviolet Responsivity for Silicon Photodetector

作　　者：尹长松[1] 朱晓刚[1] 

机构地区：[1]武汉大学物理系,武汉430072

出　　处：《Journal of Semiconductors》1997年第7期523-526,共4页半导体学报（英文版）

摘　　要：利用透过二氧化硅层进行杂质扩散的方法，获得低表面浓度浅结深并具有漂移自建场的掺杂层，制作最佳厚度的光透射膜，使硅光敏二极管的紫外响应获得改善，得到在254nm波长下响应度达0．18A／W的结果．Very shallow doped layer with low surface impurity concentration and minority carrier's drift electric field is formed by diffusing boron through thin silicon dioxide. The thickness of the silicon dioxide layer on the sensitive region for the optimal transmit of light at the wavelength of 254nm is calculated and formed as well. We get the responsivity of the photodiode at the wavelength 254urn as high as 0. 18A/W.

关 键 词：硅光探测器 紫外响应 硅光电管 

分 类 号：TN364.1[电子电信—物理电子学]