流体静压下研究电场畴的形成机制  

Investigation of Formation Mechanism Electric Field Domains by Hydrostatic Pressure

作　　者：孙宝权[1] 刘振兴[2] 江德生[1] 

机构地区：[1]中国科学院半导体研究研究所,北京100083 [2]中国科学院物理研究所,北京100080

出　　处：《Journal of Semiconductors》1997年第7期554-557,共4页半导体学报（英文版）

摘　　要：本文利用流体静压方法研究了掺杂弱耦合GaAs／AIAs超晶格中电场畴的形成机制．对于第一个电流类平台区域，我们观察到两种级联共振隧穿过程，即当p≤2kbar时，高场畴为Γ-Γ级联共振隧穿过程，而当p＞2kbar时，高场畴为Γ－X级联共振隧穿过程．对于第二个电流类平台区域，高场畴常压下为Γ－X级联共振隧穿．Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AIAs superlattices. For the first current plateau-like, under pressure two kinds of sequential resonant tunneling are observed. For p≤2kbar, the high-field domain is formed by Γ-Γ Process, while for p> 2kbar, the high-field domain is formed by Γ-X process. For the second current plateaulike, at ambient pressure the high-field domain is attributed to Γ-X sequential resonant tunneling.

关 键 词：电场畴 流体静压 半导体超晶格 形成机制 

分 类 号：TN301[电子电信—物理电子学]