Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films  

作　　者：LI Li FANG Liang CHEN Ximing LIU Gaobin LIU Jun YANG Fengfan FU Guangzong KONG Chunyang 

机构地区：[1]College of Photoelectric Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China [2]Department of Applied Physics, Chongqing University, Chongqing 400044, China [3]Department of Physics, Chongqing Normal University, Chongqing 400047, China

出　　处：《Rare Metals》2007年第3期247-253,共7页稀有金属（英文版）

基　　金：the Program for New Century Excellent Talents in Universities, MOE, China (No. NCET-05-0764);the Tackle Key Problems on Scientific Technology Foundation of Chongqing Municipality (Nos. CSTC2005AA4006-A6 and CSTC2004AC4034);the Natural Science Foundation of Chongqing Municipality (No. CSTC2005BA4016);China Postdoctoral Science Foundation (No. 2005037544);the Inno-base for Graduates of Chongqing University (No. 200506Y1B0240131).

摘　　要：Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.

关 键 词：AZO thin films structure optical and electrical properties ANNEALING transmittance spectra electrical resistivity 

分 类 号：O484[理学—固体物理]