双势垒量子阱薄膜压阻效应实验研究  

Piezoresistive Effect Study of Double-barrier Superlattice Quantum Well Membrane

作　　者：谢斌[1] 薛晨阳[1] 张文栋[1] 张斌珍[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,太原030051

出　　处：《固体电子学研究与进展》2007年第3期290-294,共5页Research & Progress of SSE

基　　金：国家自然科学基金项目资助(项目批准号:50405025)

摘　　要：采用分子束外延方法在砷化镓衬底上生长了AlAs/GaAs双势垒量子阱薄膜结构。介绍了量子阱薄膜在单轴压力作用下的压阻实验,测试出薄膜在压力影响下的I-V曲线,并分析了量子阱薄膜压阻效应的成因。通过实验证实了量子阱薄膜具有较高灵敏度的压阻效应,其压阻灵敏度比目前常用的多晶硅的压阻灵敏度提高一个数量级。The used AlAs/GaAs superlattice quantum well membrane has grown by MBE on （001）-oriented GaAs substrates. In this paper, the uniaxial piezoresistive effect experiment on superlattice quantum well membrane has been introduced, the pressure-dependent currentvoltage characteristic has been tested, the curve of piezoresistive effect and the cause of which has been analyzed. The high piezoresistive sensitivity of superlattice quantum well has been confirmed, the piezoresistive sensitivity of supperlattice quantum well is one order higher than that of polysilicon.

关 键 词：量子阱薄膜 压阻效应 压阻灵敏度 

分 类 号：TN304.055[电子电信—物理电子学] TN304.23