钟控神经元MOS晶体管的改进HSPICE宏模型  

Modified HSPICE Macro-model of Clock-controlled Neuron-MOS

作　　者：杨媛[1] 高勇[1] 余宁梅[1] 张如亮[1] 胡挺[1] 

机构地区：[1]西安理工大学电子工程系,西安710048

出　　处：《固体电子学研究与进展》2007年第3期301-304,共4页Research & Progress of SSE

基　　金：西安-应用材料创新基金资助项目(XA-AM200514)

摘　　要：为了解决传统钟控神经元MOSSPICE模型无法进行连续若干个周期瞬态分析的问题,提出了一种改进的钟控神经元MOSSPICE子电路宏模型,采用HSPICE对器件进行了建模,并对模型进行了验证。验证结果表明,改进的模型既适用于普通神经元MOS,可以进行直流特性扫描分析,也可以进行瞬态特性分析;由于模型具有自动"记忆"预充电阶段输入端电平的功能,因此即使在不同的周期输入端所接固定电平不同,也可以进行连续任意个周期的瞬态特性仿真,从而使改进的模型具有更大的灵活性和实用性。In order to settle the problem of conditional clock-controlled neuron-MOS SPICE model that can not be used for the simulation of transient analysis for continuous periods, a modified SPICE macro-model for clock-controlled neuron-MOS is presented. The device is modeled with HSPICE and the model is verified by simulation results and measurement results. The verification results show that the modified model not only can be used for normal neuronMOS and for DC sweep analysis, but also can be used for transient analysis. And because the modified model possesses the capability of automatically ＂remembering＂ the voltage of the input gates at the pre-charge stage, even though the input gates are applied with different voltages at different periods, the model can be used for the transient analysis of continuous periods, resulting in more flexibility and practicability.

关 键 词：钟控神经元金属-绝缘层-半导体 SPICE模型 子电路 

分 类 号：TN386.1[电子电信—物理电子学] TN432