带浅沟槽隔离的双光电二极管电路模型研究  

Research on the Equivalent Circuit Model of the Double Photo-diodes with Shallow Trench Isolation

作　　者：王倩[1] 毛陆虹[1] 梁惠来[1] 张世林[1] 郭维廉[1] 黄家乐[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《固体电子学研究与进展》2007年第3期356-360,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助课题(批准号:60536030;60676038);天津市应用基础研究计划重点项目(批准号:06YFJZJC00200)

摘　　要：通过器件模拟并结合实验结果,在已有PIN(Positive intrinsic negative)和DPD(Double photo-diodes)探测器电路模型基础之上,对带浅沟槽隔离(STI)准PIN结构的DPD探测器电路模型进行了探讨。模拟了由深N阱和浅沟槽给DPD带来的性能上的改变,同时结合实验结果,从响应电流和探测器的等效串联电阻两方面对电路模型进行了修正,得到了符合该器件的较准确电路模型。On the basis of PIN （Positive Intrinsic Negative）and DPD （Double Photo-Diodes） detector equivalent circuit models, this paper discusses about the equivalent circuit model of the quasi-PIN structure DPD with shallow trench isolation （STI） by analyzing device simulation and experimental results. After simulating, the improvement performance caused by deep N well and STI is compared with the experimental results. Then the existing model is modified from two aspects-response current and equivalent series resistance. At the end of the paper, more accurate and proper circuit model for the device is got.

关 键 词：硅光电探测器 电路模型 响应电流 等效串联电阻 

分 类 号：TN364.1[电子电信—物理电子学]