两种后处理方法对HfO_2薄膜性能的影响  

Influence of Two Post-treatment Methods on Properties of HfO_2 Thin Films

作　　者：尚光强[1] 王聪娟[1] 袁磊[1] 贺洪波[1] 范正修[1] 邵建达[1] 

机构地区：[1]中国科学院上海光学精密机械研究所光学薄膜技术研究发展中心,上海201800

出　　处：《光子学报》2007年第9期1683-1686,共4页Acta Photonica Sinica

摘　　要：利用电子束蒸发和光电极值监控技术制备了氧化铪薄膜,并分别用两种后处理方法(空气中退火和氧等离子体轰击)对样品进行了处理.然后,对样品的透过率、吸收和抗激光损伤阈值进行了测试分析.实验结果表明,两种后处理方法都能不同程度地降低了氧化铪薄膜的吸收损耗、提高了抗激光损伤阈值.实验结果还表明,氧等离子体轰击的后处理效果明显优于热退火,样品的吸收平均值在氧等离子体后处理前后分别为34 .8 ppm和9 .0 ppm,而基频(1 064 nm)激光损伤阈值分别为10 .0 J/cm2和21 .4 J/cm2.HfO2 thin films were prepared by electron beam evaporation technique and photoelectric maximum control method. Two kinds of post treatment methods, both oxygen plasma bombardment and anneal in air, were employed to treated with the samples. Optical transmittance, absorption and laser induced damage threshold （LIDT） at 1 064 nm were measured before and after the treatments. It is shown that post-treated with oxygen plasma is better than annealing in air to decrease the absorption and improve the LIDT of Hf（）e thin films. The absorption of HfO2 thin film dropped from 34.8 ppm to 9 ppm and the LIDT at 1 064 nm increased from 10.0 J/cm^2 to 21.4 J/cm^2, after post-treated with oxygen plasma. The difference between the two post treated methods is studied in this article.

关 键 词：氧化铪薄膜 薄膜退火 抗激光损伤阂值 薄膜吸收 

分 类 号：TN24[电子电信—物理电子学]