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作 者:杨志平[1] 杨广伟[1] 王少丽[1] 田晶[2] 李盼来[1] 李旭[1]
机构地区:[1]河北大学物理科学与技术学院 [2]河北大学电子信息工程学院,保定071002
出 处:《高等学校化学学报》2007年第9期1631-1633,共3页Chemical Journal of Chinese Universities
基 金:河北省科学技术发展基金(批准号:51215103b)资助.
摘 要:BaZnP2O7∶Eu3+ phosphor was synthesized by a high temperature solid state reaction.The compound shows four major emission peaks locating at 588,613,622 and 654 nm that correspond to the 5D0-7F1,5D0-7F2 and 5D0-7F3 typical transition of Eu3+,respectively.The influence of the concentration of Eu3+ ions on the emission intensity was investigated and the concentration quench did not occured.The role of charge compensation of Li+,Na+ and Cl-ions to the emission intensity was also studied.It was found that Li+ ions gave the best improvement to enhance the intensity of the emissions.The results show that BaZnP2O7∶Eu3+red-emitting phosphor is very suitable for white light emitting diode(w-LED)based on UV InGaN chip.BaZnP2O7:Eu^3+ phosphor was synthesized by a high temperature solid state reaction. The compound shows four major emission peaks locating at 588,613,622 and 654 nm that correspond to the ^5Do-^7F1 , ^5D0-^7F2 and ^5D0-^7F3 typical transition of Eu^3+ , respectively. The influence of the concentration of Eu^3+ ions on the emission intensity was investigated and the concentration quench did not occured. The role of charge compensation of Li^+ , Na^+ and Cl^- ions to the emission intensity was also studied. It was found that Li^+ ions gave the best improvement to enhance the intensity of the emissions. The results show that BaZnP2O7: Eu^3+ red-emitting phosphor is very suitable for white light emitting diode (w-LED) based on UV InGaN chip.
关 键 词:发光二极管(LED) 荧光粉 Eu3+ 磷酸盐
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