国产GSO晶体的光产额测量  

Measuring of light yield for GSO crystal produced in China

作　　者：章志明[1] 李道武[1] 王宝义[1] 张天保[1] 魏龙[1] 

机构地区：[1]中国科学院高能物理研究所中国科学院核分析技术重点实验室,北京100049

出　　处：《核电子学与探测技术》2007年第4期727-729,共3页Nuclear Electronics & Detection Technology

摘　　要：采用与单光电子相比较的方法测量了国产GSO晶体样品的光电子产额,结果表明,GSO样品的光电子产额及能量分辨率与闪烁体在光电倍增管光阴极面上的放置方式有关,在较好条件下,被测GSO晶体的光电子产额可到2013phe/MeV,对137Cs 661.6keV光峰的能量分辩为FWHM=10.1%。We measured the light yield of some GSO samples which produced in China with a method of comparing with the mono-photoeleetron. The results show these GSO samples have a light yield of 2013phe/MeV and the energy resolution of 10.1% at 661.6keV photo-peak for ^137Cs . It is noted that light yield and energy resolution are related to the placing way through which the scintillators are put on the photocathode of PMT.

关 键 词：GSO晶体 光产额 单光电子 

分 类 号：TL812[核科学技术—核技术及应用]