Magnetic Properties of NiCuZn Ferrite Thin Films Prepared by the Sol-gel Method  

Magnetic Properties of NiCuZn Ferrite Thin Films Prepared by the Sol-gel Method

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作  者:刘锋 

机构地区:[1]Institute of Microelectronics,Tsinghua University

出  处:《Journal of Wuhan University of Technology(Materials Science)》2007年第3期506-509,共4页武汉理工大学学报(材料科学英文版)

基  金:the National Natural Science Foundation of China (No. 90607021).

摘  要:Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by using the sol-gel method and rapid thermal annealing (RTA), and their magnetic properties and crystalline structures were investigated. The samples calcined at and above 600 ℃ have a single-phase spinel structure and the average grain size of the sample calcined at 600 ℃ is about 20 nm. The initial permeability μi, saturation magnetization M and coercivity H of the samples increase with the increasing calcination temperature. The sample calcined at 600 ℃ exhibits an excellent soft magnetic performance, which has μi=33.97 (10 MHz), Hc=15.62 Oe and Ms=228.877 emu/cm^3. Low-temperature annealing can enhance the magnetic properties of the samples. The work shows that using the sol-gel method in conjunction with RTA is a promising way to fabricate integrated thin-film devices.Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by using the sol-gel method and rapid thermal annealing (RTA), and their magnetic properties and crystalline structures were investigated. The samples calcined at and above 600 ℃ have a single-phase spinel structure and the average grain size of the sample calcined at 600 ℃ is about 20 nm. The initial permeability μi, saturation magnetization M and coercivity H of the samples increase with the increasing calcination temperature. The sample calcined at 600 ℃ exhibits an excellent soft magnetic performance, which has μi=33.97 (10 MHz), Hc=15.62 Oe and Ms=228.877 emu/cm^3. Low-temperature annealing can enhance the magnetic properties of the samples. The work shows that using the sol-gel method in conjunction with RTA is a promising way to fabricate integrated thin-film devices.

关 键 词:Ni0.4Cu0.2Zn0.4Fe2O4 thin films  sol-gel-method rapid thermal processing magnetic properties 

分 类 号:O484.43[理学—固体物理]

 

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