精密CMOS带隙基准及过温保护电路设计  

Design of Precision CMOS Bandgap Reference with an Over Temperature Protection Circuit

作　　者：张强[1] 陈贵灿[2] 田泽[1] 王进军[1] 李攀[1] 

机构地区：[1]西北大学信息学院,陕西省西安市710127 [2]西安交通大学微电子研究所,陕西省西安市710049

出　　处：《电子工程师》2007年第9期21-24,59,共5页Electronic Engineer

基　　金：2005年西安-美国应用材料创新基金(ZX05097-XA-AM-200514);陕西省科技攻关项目(2004k05-G11)

摘　　要：设计了一款带有软启动电路的精密CMOS带隙基准源,并且利用PN结正向导通电压具有负温度系数和基准源提供的偏置电流具有正温度系数的原理实现了过温保护功能。采用UMC公司0.6μm 2P2M标准CMOS工艺进行设计和仿真,HSPICE模拟表明带隙基准的输出电压为1.293 V,且具有较高的精度和稳定性。在1.5V^4.0V的电源电压范围内基准随输入电压的最大偏移为0.27 mV;在-40℃~120℃的温度范围内,基准随温度的变化约为4.41 mV;基准的输出启动时间约为25μs;当工作温度超过160℃时过温保护电路将输出使能信号关断整个系统。A precision CMOS Bandgap Reference with a soft start-up circuit is presented, the principle of the PN junction with a negative temperature coefficient when it is forward biased, and the reference current has a positive temperature coefficient have been utilized to realize the function of the Over Temperature Protection （OTP）. By using 0.6μm 2P2M standard CMOS process of UMC, this reference was designed and simulated, HSPICE simulation results indicated that the output of the reference voltage is 1. 293V and this bandgap reference has higher precision and stability. The maximal skew of reference voltage to input voltage is 0.27 mV in the power supply range from 1.5 V to 4 V, and to the temperature is about 4.41 mV at the range of -40 ℃ - 120 ℃. The start-up time of output is about 25 μs. When the temperature exceeds 160 ℃, an enable signal will be generated which shuts down the whole system.

关 键 词：带隙基准 温度补偿 软启动电路 过温保护电路 

分 类 号：TN402[电子电信—微电子学与固体电子学]