Photonic crystal vertical-cavity surface-emitting laserbased on GaAs material  

作　　者：XU XingSheng WANG ChunXia SONG Qian DU Wei HU HaiYang ZHAO ZhiMin LU Lin KAN Qiang CHEN HongDa 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083,China

出　　处：《Chinese Science Bulletin》2007年第18期2473-2476,共4页

基　　金：Supported by the National Natural Science Foundation of China (Grant Nos. 60345008, 60377011 and 60537010)

摘　　要：A photonic crystal vertical-cavity-surface-emitting laser (PC-VCSEL) with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 μm with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc.A photonic crystal vertical-cavity-surface-emitting laser （PC-VCSEL） with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 μm with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc.

关 键 词：光子晶体 空穴表面发射激光 单模激光 砷化镓 

分 类 号：TN24[电子电信—物理电子学]