稀磁性半导体研究进展  

Progress in research of diluted magnetic semiconductor

作　　者：王永强[1] 张爱芸[1] 

机构地区：[1]河南理工大学物理化学系,河南焦作454003

出　　处：《河南理工大学学报（自然科学版）》2007年第4期451-456,共6页Journal of Henan Polytechnic University（Natural Science）

基　　金：河南省自然科学基金资助项目(0511050200)

摘　　要：由磁性离子部分地代替非磁性阳离子所形成的稀磁性半导体,因其具有很多独特的性质而受到人们的广泛关注.本文主要介绍了稀磁性半导体的研究背景、研究过程、现状及其发展前景,并以Y.Matsumoto等所做的研究为例,介绍了此类材料的制备、研究方法以及技术中存在的缺陷.The discovery of ferromagnetic diluted magnetic semiconductors by substituting the magnetic ions for nonmagnetic positive ion has received wide attention because of the potential applications. In this study, background, progress, actuality, foreground of the diluted magnetic semiconductor were mainly introduced. The preparation and the defect which exits in the technology were introduced in Y. Matsumoto＇s research.

关 键 词：稀磁性半导体 自旋 掺杂 铁磁性质 

分 类 号：TQ423.12[化学工程]