纳米晶体硅量子点薄膜的制备及表征  

Preparation and Characterization of Nanocrystalline Silicon Quantum Dots Film

作　　者：张生才[1] 吴成昌[1] 肖夏[1] 王云峰[1] 姚素英[1] 赵新为[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《纳米技术与精密工程》2007年第3期211-214,共4页Nanotechnology and Precision Engineering

基　　金：天津市自然科学基金资助项目(043612311)

摘　　要：利用激光烧蚀沉积法在n-Si(100)衬底上制备非晶硅(-αSi)薄膜,再经过高温退火技术处理使-αSi晶化成纳米硅晶体(nc-Si)量子点.利用拉曼(Raman)光谱仪、X射线衍射仪(XRD)、透射电子显微镜(TEM)以及原子力显微镜(AFM)等测试仪器对nc-Si薄膜进行表征,发现制备的nc-Si量子点排列紧密、尺寸均匀,具有很好的单晶结构,制备的nc-Si薄膜晶化比例很高,并且优先选择在[111]方向晶化.Nanocrystalline silicon （nc-Si）quantum dots were formed on n-type Si（100） substrate by laser ablation method and RTP technology. The nc-Si films were characterized by the Raman spectroscopy, X-ray diffraction spectroscopy （XRD）, transmission electron microscopy （TEM） and atom force microscope （AFM）, respectively. Results show that the alignment of the fabricated nc-Si quantum dots is compact and the dot size is uniform. The fabricated nc-Si films have good single crystalline structure and high crystallization proportion, especially, in Si [ 111 ] orientation.

关 键 词：nc—Si量子点 激光烧蚀 拉曼光谱 X射线衍射仪 透射电子显微镜 原子力显微镜 

分 类 号：TN304.05[电子电信—物理电子学]