Effective Increase of Crystal Area during Sublimation Growth of 6H-SiC by Using the Cone-shaped Baffle  

作　　者：Shouzhen JIANG Xiangang XU Xiaobo HU Juan LI Xiufang CHEN Minhua JIANG 

机构地区：[1]State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China [2]College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

出　　处：《Journal of Materials Science & Technology》2007年第5期685-688,共4页材料科学技术（英文版）

摘　　要：A novel design of crucible is proposed in this paper for the growth of SiC crystals. The relation between grown crystal shape and temperature distribution in a growth chamber was discussed. It is pointed out that the crystal shape had a close relationship with temperature distribution. The calculations suggested that the radial temperature field of the growing crystal became homogenous by setting up the cone-shaped baffle in the growth chamber. By modifying the crucible design and temperature distribution in the growth chamber, it is possible to enhance the enlargement of crystal, and also possible to keep grown surface flat.A novel design of crucible is proposed in this paper for the growth of SiC crystals. The relation between grown crystal shape and temperature distribution in a growth chamber was discussed. It is pointed out that the crystal shape had a close relationship with temperature distribution. The calculations suggested that the radial temperature field of the growing crystal became homogenous by setting up the cone-shaped baffle in the growth chamber. By modifying the crucible design and temperature distribution in the growth chamber, it is possible to enhance the enlargement of crystal, and also possible to keep grown surface flat.

关 键 词：6H-SIC Sublimation method Simulation Temperature distribution 

分 类 号：TG14[一般工业技术—材料科学与工程]