非线性光导开关中的高场畴机制  

Research on High-field Domain of Photoconductive Switches

作　　者：刘鸿[1] 

机构地区：[1]成都大学电子信息工程学院

出　　处：《成都大学学报（自然科学版）》2007年第3期228-231,共4页Journal of Chengdu University（Natural Science Edition）

摘　　要：应用多能谷结构的转移电子效应结合畴动力学分析探讨了高场畴的形成和发展的微观过程,在此基础上把非线性光导开关中观察到的重要特征现象——电流丝与气体放电中的放电现象相比较,合理地提出了一个重要的物理模型:畴电子崩.这一概念是系统全面地描述非线性光导开关的物理机制的基础.The microcosmic process of the formation and the development of a high-field domain are explored by the theory of the multi-energy valley structure associated with transferred-electron effect and domain kinetics. Comparisons and contrasts are made of the current filaments in high gain PCSS and those found in gas discharge. They are strikingly similar with each other. So the first analytical model to explain the physical origin of the lock-on effect is presented. In this model, the high-field domain and another electrons ahead have been regarded as a domain electron avalanches. It is helpful to explain the characteristics in nonlinear mode.

关 键 词：空间电荷 多能谷结构 转移电子效应 高场畴 畴电子崩 

分 类 号：TN015[电子电信—物理电子学]