快速烧结TiB_2陶瓷  

TiB2 ceramic fabricated by rapid sinter

作　　者：管德良[1] 金松哲[1] 孙世成[1] 梁宝岩[1] 

机构地区：[1]长春工业大学材料科学与工程学院,吉林长春130012

出　　处：《长春工业大学学报》2007年第3期305-307,共3页Journal of Changchun University of Technology

基　　金：国家自然科学基金资助项目(50310351)

摘　　要：采用放电等离子烧结技术制备TiB2陶瓷,研究了烧结温度对TiB2陶瓷烧结致密化的影响。在1 700℃,保温仅5 min,加压30 MPa,即可获得相对密度达99%以上的致密TiB2烧结体。扫描电镜分析表明:烧结体晶粒细小,组织均匀;晶粒随烧结温度的提高而缓慢长大。1 700℃时,块体的显微硬度值达到32 GPa。TiB2 ceramic is fabricated by spark plasma sinter. Effect of sintering temperature on sintering densification was investigated. The dense TiB2 can be sintered with relative density 99% at 1 700 ℃and under 30 MPa just in 5 min. Scanning electric microscopy showed that the sintered bulk has fine and uniform microstructure, and the crystalline size of the bulks increases with the rising of sintering temperature. The hardness of TiB2 ceramic can reach 32 GPa at 1 700 ℃.

关 键 词：TIB2 放电等离子烧结 

分 类 号：TG135.5[一般工业技术—材料科学与工程]