Gd掺杂BiFeO_3铁磁电陶瓷的介电性能  

Dielectric Properties of Multiferroic BiFeO_3 Ceramic Doped with Gd

作　　者：郭铁朋[1] 秦萍[2] 

机构地区：[1]河南省地质矿产勘查开发局第三地质调查队,河南信阳464000 [2]信阳师范学院物理电子工程学院,河南信阳464000

出　　处：《常熟理工学院学报》2007年第8期26-30,共5页Journal of Changshu Institute of Technology

摘　　要：采用固相反应法制备了对BiFeO3进行A位Gd掺杂的系列陶瓷样品Bi1-xGdxFeO3(x为0.00、0.05、0.10、0.15、0.20),借助XRD物相分析手段对样品进行的研究表明其均为三方钙钛矿结构;室温下频率在100Hz-1MHz范围内,Gd掺杂各组分样品的介电常数εr都比未掺杂时显著提高,x=0.05组分样品的介电常数εr最大;除了x=0.05组分,各组分样品的介电损耗tanδ都比未掺杂时略为减小.Multiferroic Bi1-xGdxFeO3（x=0.00,0.05,0.10,0.15,0.20） ceramics were prepared by solid state reaction method.XRD analysis showed all the samples had perovskite structure.Frequency dependence of dielectric properties of Bi1-xGdxFeO3 samples at room temperature was measured in a frequency range from 100Hz to 1MHz.The dielectric constant of the Bi1-xGdxFeO3 is larger than BiFeO3 with the Gd^3＋ content increasing and with x=0.05,the dielectric constant has a biggest value in the five samples and the other dielectric loss has a slighter decrease than BiFeO3.

关 键 词：铁磁电材料 BIFEO3 GD掺杂 介电性 

分 类 号：O656.32[理学—分析化学]