掺铝Co_3O_4的制备及其电容性能研究  

Prerapation and Supercapacitor Property of Al Doped Co_3O_4

作　　者：葛鑫[1] 陈野[1] 张春霞[1] 舒畅[1] 

机构地区：[1]哈尔滨工程大学材料科学与化学工程学院,黑龙江哈尔滨150001

出　　处：《电化学》2007年第3期249-252,共4页Journal of Electrochemistry

基　　金：教育部博士点基金(20050217019)资助

摘　　要：以KOH作沉淀剂制备掺杂Al（Ⅲ）的Co3O4粉体.X射线衍射显示,掺Al的Co3O4不改变其晶型结构.循环伏安、恒流充放电等测试表明,化学掺Al后的Co3O4电极,其比容量提高,当Co（Ⅱ）与Al（Ⅲ）的摩尔比为1∶0.05时,在0-400 mV的电位区间内,5 mA/cm^2电流密度下,单电极放电比容量可达518.07 F/g.With KOH as precipitator to prepare Aluminum doped Co3O4, X-ray diffraction indicated that the doping Al did not change the crystal structure of Co3O4. Electrochemical properties of the sample were tested by cyclic voltammetry and constant-current charge/discharge. The results showed that the chemical doping improved the specific capacitance. When the mol ratio of Co（ Ⅱ） with Al（Ⅲ ） was 1 ： 0.05, the specific capacitance was up to 518.07 F/g within 0 -400 mV potenitial at current density 5 mA/cm^2.

关 键 词：电容器 CO3O4 掺杂 AL 

分 类 号：TM53[电气工程—电器]