用于制备硅LED的太阳能电池技术  

Solar Cell Technology for Fabricating Si LED

作　　者：杨广华[1] 毛陆虹[1] 张彬[1] 郭维廉[1] 

机构地区：[1]天津大学电信工程学院

出　　处：《半导体技术》2007年第10期829-832,共4页Semiconductor Technology

基　　金：国家自然科学基金资助课题(60536030;60676038);天津市基础研究重点项目(06YFJZJC00200)

摘　　要：集成电路工艺发展使得芯片内部的互连成为芯片延时的主要问题。制备出高光效的硅LED已经成为OEIC发展的瓶颈。硅是间接带隙半导体,而且载流子寿命较长。所以使用硅材料制备发光器件是长久以来特别引人关注而又较难解决的问题。采取降低非辐射复合速率,增加辐射复合的机会可以实现硅LED的发光。介绍了用于制备硅LED的太阳能电池技术原理和主要方法,以及采用这一原理实现PERL硅电池和区熔硅衬底非晶硅电池用于制备LED的技术。　The internal link in chips becomes the main problem of time-delay with the development of IC technology.The bottleneck of the OEIC（optoelectronic integrated circuit）is how to fabricate the efficient Si LED（light emitting device）.Si is an indirect band gap semiconductor and the carrier lifetime is much longer.So it is very abstractive to fabricate LED with Si material,however it is very difficult to achieve this goal.The light emitting of Si LED can be obtained by reducing non-radioactive combination ratio and increasing radioactive combination opportunity.The solar cell technology for making Si LED are introduced,including PERL（passivated-emitter,rear locally-diffused）and a-Si∶H solar cell technology.

关 键 词：光电子集成电路 硅光发射器件 太阳能电池 钝化发射极、背面点扩散 非晶硅 

分 类 号：TN256[电子电信—物理电子学] TN305