低温磷化电位-时间曲线与成膜过程研究  

The Research of Φ-t Diagram and Growth of Low-Temperature Phosphating Processes

作　　者：方峰[1] 马驰[1] 巩党国[1] 曹文奎[1] 蒋建清[1] 

机构地区：[1]东南大学材料科学与工程学院,江苏南京211189

出　　处：《材料保护》2007年第10期1-4,共4页Materials Protection

基　　金：973前期研究专项(2007CB616903);江苏省材料摩擦学试验室基金(KJSMCX04003);张家港市科技攻关项目(ZJG200609)

摘　　要：为了解拉丝用低温磷化膜的成膜机理,研究了其电位-时间(-t)曲线变化规律,并采用扫描电镜(SEM)观察了磷化膜的形貌,用X射线能谱对磷化成分进行了分析。结果表明,-t曲线和磷化膜生长过程可分为三个阶段:磷化第一阶段约15s,电位快速正移,出现零星分布、长约10μm的磷化膜小晶粒;磷化第二阶段约45s,电位快速负移,出现直径大小约10μm的薄片层状晶粒团,单个晶粒直径约5μm,晶粒与基底间存在底膜;磷化第三阶段约840s,电位缓慢正移直至稳定,前期有大量晶粒形成并不断长大,后期晶粒显著长大,但数量变化不大,磷化膜不断增厚直至磷化反应终止。To clarify the mechanism of low temperature phosphating processes, the relationships between voltage and time (Φ- t diagram) in phosphating processes was studied and the morphology of obtained phosphate films were observed. Experimental results showed that, the low temperature phosphating processes can be divided into three steps: 1. The voltage moved to more positive values and a lot of phosphates grains about 10 μm appeared in the first 15 s; 2. The voltage moved toward negative direction and some phosphates grains about 5 μm appeared in the next 45 s; 3. The voltage moved then in the positive direction slowly and to a constant value in the next 840 s. During the first period, a great deal of phosphates grains formed and grew up. And then small grains grew up to larger ones but no new grains formed. Ultimately, the phosphating reaction ended.

关 键 词：低温 磷化膜 Ф-t曲线 形貌 

分 类 号：TG174[金属学及工艺—金属表面处理]