非水溶液中电化学沉积制备Sb_2Te_3热电薄膜  

Electrodeposition of Sb_2Te_3 Thermoelectric Thin Film from Non-aqueous Solution

作　　者：姚琴[1] 王春芬[1] 刘付胜聪[1] 陈立东[1] 

机构地区：[1]中国科学院上海硅酸盐研究所高性能陶瓷与超微结构国家重点实验室

出　　处：《稀有金属材料与工程》2007年第A02期419-421,共3页Rare Metal Materials and Engineering

基　　金：国家自然科学基金杰出青年基金(50325208)资助

摘　　要：采用电化学沉积法,从非水溶液DMSO中制备了Sb_2Te_3热电薄膜。并采用循环伏安、SEM、XRD、EPMA等技术分别对电化学沉积过程和产物的形貌、结构、组成进行了研究。结果表明,在非水溶液二甲亚砜(DMSO)中,当电解液中Sb原子和Te原子的摩尔比为2:3,沉积电位为-2.2V时,在室温下即可得到单相的Sb_2Te_3热电薄膜,元素的组成接近化学计量比,组成薄膜的为大小均匀的球状颗粒,直径约为2～3μm左右。沉积电位对薄膜的组成影响明显,通过改变沉积电位,可以分别得到Te微过量的薄膜和近化学计量比的薄膜。Sb2Te3 thermoelectric thin films have been prepared by electrodeposition from the non-aqueous solution DMSO at room temperature. The electrodeposition reactions were studied by cyclic voltammetry. The morphologies, structure, and composition of the as-prepared films were characterized by field-emission scanning electron microscopy （SEM）, X-ray diffraction （XRD）, and electron microprobe analysis （EPMA）. The influence of deposition potential on the chemical composition and crystallinity of the films was discussed. The results suggested that the single phase and near stoichiometry polycrystalline film could be obtained at room temperature at deposition potentials of-2.2 V vs. Ag/AgC1 from a solution of 8mmol/1 SbC13 and 12 mmol/1 TeC14 in DMSO. The compositions of films were influenced by deposition potential. The Te-rich film would be obtained when the deposition potential was less than -2.2 V. The SEM analysis showed the near stoichiometry film was smooth with a granular structure and the diameter of the granule was about 2 -3 μm.

关 键 词：电化学沉积 Sb2Te3 热电薄膜 非水溶液 

分 类 号：O484[理学—固体物理]