新型3mm波干扰材料—超薄导电片的消光性能研究  

Study on the Extinction Capability of New-type Interference Material of 3mm Wave—Ultra-thin Electric Chip

作　　者：周明善[1] 徐铭[1] 李澄俊[1] 陈兵[1] 陶勇[1] 

机构地区：[1]南京理工大学化工学院,江苏南京210094

出　　处：《兵工学报》2007年第8期970-974,共5页Acta Armamentarii

摘　　要：以鳞片状晶体石墨为基本原料,通过湿法球磨,研制出一种新型3 mm波衰减材料——超薄导电片。研究了其基本物理性能,测试了超薄导电片对3毫米波的动态衰减性能。基于毫米波干扰材料的雷达散射截面理论,通过对超薄导电片的趋肤深度、表面电阻率、热损耗电阻的分析、估算,说明了超薄导电片对3 mm波的吸收衰减优于毫米波箔条,约占总衰减的35.6%.应用米氏理论,计算了超薄导电片在3 mm波段的消光参数,认为在粒径参数k较小时,以吸收衰减为主;当k较大时以散射衰减为主,在半波长(超薄导电片的粒径为1.5 mm)时,吸收衰减约占总衰减的42%.A new-type attenuation material of 3 mm wave——the ultra-thin electric chip was made from flaky crystal graphite by means of the process of wet ball milling. The basic physical property was studied, the dynamic 3mm wave attenuation capability was tested for the chip. Based on the radar scatter cross section theory of millimeter wave interference materials, the analysis and estimation result for skin depth, surface resistivity, heat wastage resistance of the chip shows that the absorption attenuation makes up about 35.6 % of the total attenuation and is obviously superior to that of chaff. The calculation results of extinction parameters of the chip in 3 mm waveband by the Mie theory show that the absorption is leading factor at smaller partial size parameter k ; the scattering is leading factor at bigger k ; the absorption makes up 42 % of the total attenuation at half wavelength （particle size 2 r = 1.5 mm）.

关 键 词：无机非金属材料 3 mm波 雷达散射截面 消光 衰减 吸收 

分 类 号：TN972.41[电子电信—信号与信息处理]