高速GaAs驱动器  

High Speed GaAs Driver

作　　者：李和委[1] 白锡巍[1] 

机构地区：[1]电子工业部第十三研究所

出　　处：《半导体情报》1997年第3期28-32,共5页Semiconductor Information

摘　　要：报道了用于驱动ＧａＡｓＭＭＩＣ射频开关的高速ＧａＡｓ驱动器的设计与制作。测试结果为：同相输出时，上升时间６ｎｓ，延迟时间４．８ｎｓ，下降时间６ｎｓ，延迟时间４ｎｓ；反相输出时，上升时间６．５ｎｓ，延迟时间３ｎｓ，下降时间１０ｎｓ，延迟时间６．７ｎｓ。与ＧａＡｓＭＭＩＣ射频开关进行了联试，结果不仅没有影响开关的射频特性。This paper reported the design and fabrication of high speed GaAs driveres for GaAs MMIC RF switches.The measurement results were t r=6ns,t d1 =4 8ns,t f=6ns,t d2 =4ns with same phase output and t r=6 5ns,t d1 =3ns,t f=10ns,t d2 =6 7ns with opposite phase output.When the driver worked with GaAs MMIC RF switches,the switches′s RF characteristies weren′t affected and their speed remained unchanged.

关 键 词：半导体 驱动器 射频开关 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学] TN303