CdS纳米锥的合成以及光致发光性能研究(英文)  

Synthesis and photoluminescence of CdS nanocones

作　　者：陈志刚[1,2] 邹进 刘岗[1] 李锋[1] 逯高清[1,2] 成会明[1] 

机构地区：[1]沈阳材料科学国家(联合)实验室,中国科学院金属研究所 [2]ARC Centre of Excellence for Functional Nanomaterials,The University of Queensland,QLD 4072,Australia [3]School of Engineering and Centre for Microscopy and Microanalysis,The University of Queensland,QLD 4072,Australia

出　　处：《电子显微学报》2007年第5期423-427,共5页Journal of Chinese Electron Microscopy Society

基　　金：Key Research Programof MOST,China(2006CB932703);Australia Research Council Project.

摘　　要：将商用CdS粉在真空炉中通过简单的热蒸发获得了大量高纯的CdS锥状纳米结构。扫描电子显微镜(SEM)、透射电子显微镜(TEM)观察和X射线衍射谱(XRD)的分析表明:CdS纳米锥状晶体为六角硫镉矿晶体结构,其形状为典型的纳米锥,晶格常数为a=0.413nm,c=0.671nm,沿着[0001]方向生长。CdS纳米锥的长度是20μm到50μm,直径从～100nm减少到～20nm。本文还详细研究了CdS纳米锥晶体的拉曼特性及其在激光辐射下的室温光致发光行为,探讨了绿光(波长为～512nm)发射的机制。结果表明,这种CdS纳米锥可能用于新颖的光学器件。　High purity CdS nanocones were obtained through a simple thermal evaporation process with highly active CdS nanoparticles as the evaporation source.It was found that these CdS nanocones had a single crystal hexagonal wurtzite structure growing along the [0001] direction.They had a cone-shaped morphology with typical length of 20 μm to 50 μm and their diameter decreases from ～100 nm to 20 nm with lattice constants of a=0.413 nm and c=0.671 nm.The photoluminescence（PL）characterization of the CdS nanocones shows strong near-band UV emission（about 512 nm）,which indicates that the CdS nanocones have potential application in optoelectronic devices.

关 键 词：CDS 高纯度纳米锥 光致发光 

分 类 号：TB383.1[一般工业技术—材料科学与工程]