还原增感立方体AgCl微晶光电子衰减特性  

Decay Characteristics of Photoelectrons in Sensitized Cubic AgCl Microcrystals

作　　者：胡延霞[1] 张荣香[1] 张继县[1] 代秀红[1] 郭海朝[1] 李晓苇[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《信息记录材料》2007年第5期15-18,共4页Information Recording Materials

基　　金：国家科学基金资助项目(10274017);河北省自然科学基金资助项目(103097)。

摘　　要：利用微波吸收介电谱检测技术测得了还原增感立方体氯化银微晶光电子衰减随增感条件的变化规律。实验发现,随增感条件的不同,增感中心发生了由空穴陷阱作用向深电子陷阱作用的转变。当增感中心起空穴陷阱作用时通过俘获空穴,降低了光电子与光空穴的复合几率,提高了光电子的利用率,从而有利于潜影的形成。由此得到在增感浓度一定时的最佳增感时间和最佳增感温度的组合。The decay nile of photoelectrons in sensitized cubic AgCI microcrystals is obtained by microwave absorption dielectric spectrum detection technique. It is found that the trap effect of the sensitization centers varies from the hole trap to deep electron trap with the change of sensitization conditions. The recombination rate of photoelectrons and photoholes decreases because of the effect of hole trap, and the utility rate of photoelectrons increases which is good to the formation of the latent image. The optimal sensitization time and optimal sensitization temperature are obtained under given sensitization coneentration.

关 键 词：微波吸收 还原增感 光电子 空穴陷阱 电子陷阱 

分 类 号：TQ572.31[化学工程—精细化工]