激光对半导体材料损伤的机理研究  

The study of the mechanism of laser-induced damage on semiconductor

作　　者：冯津京[1] 阎吉祥[1] 

机构地区：[1]北京理工大学信息科学技术学院,北京100081

出　　处：《光学技术》2007年第5期643-644,647,共3页Optical Technique

基　　金：国家自然科学基金资助项目(60378002)

摘　　要：研究了半导体材料对激光的吸收机制。运用一维热传导方程以及载流子耦合扩散方程研究了激光与半导体材料相互作用的热输运、自由载流子输运过程。分析了半导体材料的热学损伤、力学损伤,以及光电探测器的击穿损伤机制。应用数值模拟的方法对Nd:YAG脉冲激光(1.06μm)辐照下感兴趣的半导体材料PbS内部瞬时温度场分布进行了模拟。The absorption mechanism of semiconductor is studied. The heat transferring process and free carrier transferring process in semiconductor during laser pulse are described by researching the one dimension heat conduction equation and carrier transferring equation. Different laser-induced damage mechanisms in .semiconductor are analyzed. The transient temperature field in PbS during the irradiation by 1.06μm laser pulse which is generated by Nd： YAG lair is simulated.

关 键 词：相互作用 激光损伤效应 半导体 

分 类 号：TN241[电子电信—物理电子学]