Low Temperature Synthesis and Optical Properties of ZnO Nanowires  

ZnO纳米线的低温生长及其发光特性(英文)

作　　者：常鹏[1] 刘肃[1] 陈溶波[1] 唐莹[1] 韩根亮[2] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000 [2]甘肃省科学院传感技术研究所,兰州730000

出　　处：《Journal of Semiconductors》2007年第10期1503-1507,共5页半导体学报（英文版）

基　　金：甘肃省自然科学基金资助项目(批准号:3ZS051-A25-034)~~

摘　　要：ZnO nanowire arrays are fabricated on anodized aluminum oxide templates with electric field-assisted electrochemical technology. Transmission electron microscopy results indicate that the nanowires are straight and uniform. X-ray diffraction patterns indicate that the nanowires are highly oriented. The result of selected area electron diffraction suggests that the nanowires are single crystals. The photoluminescence spectrum presents a broad-band luminescence in the region of 350-650nm. The effect of the assisted transverse electric field on the growth process of ZnO nanowires is also discussed.采用电场辅助电化学沉积的方法在阳极氧化铝模板中沉积出ZnO纳米线阵列.透射电子显微镜和X射线衍射测试结果表明,制备的纳米线是单晶ZnO纳米线,形貌均匀,直径大约为60nm,并且择优于(101)晶面.对生长过程中所加的辅助电场的作用给出了初步解释.光致发光谱表明,在350～650nm范围内存在一个很宽的发光峰.

关 键 词：ZNO ELECTROCHEMICAL NANOWIRES PL spectrum 

分 类 号：O614.241[理学—无机化学]