Dual-Work-Function Ni-FUSI Metal Gate for CMOS Technology  

用于CMOS工艺的双功函数Ni全硅化物金属栅(英文)

作　　者：周华杰[1] 徐秋霞[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2007年第10期1532-1539,共8页半导体学报（英文版）

基　　金：国家重点基础研究发展计划(批准号:2006CB302704);国家自然科学基金(批准号:60576032)资助项目~~

摘　　要：This paper investigates the work function adjustment of a full silicidation （Ni-FUSI） metal gate. It is found that implanting dopant into poly-Si before silicidation can modulate the work function of a Ni-FUSI metal gate efficiently. With the implantation of p-type or n-type dopants,such as BF2 ,As,and P,the work function of a Ni-FUSI metal gate can be made higher or lower to satisfy the requirement of pMOS or nMOS, respectively. But implanting a high dose of As into a poly-Si gate before silicidation will cause the delamination effect and EOT loss,and thus As dopant is not suitable to be used to adjust the work function of a Ni-FUSI metal gate. Due to the EOT reduction in the FUSI Process,the gate leakage current of a FUSI metal gate capacitor is larger than that of a poly-Si gate capacitor.研究了Ni全硅化物金属栅功函数调整技术.研究表明,通过在多晶硅硅化前向多晶硅栅内注入杂质能够有效地调整Ni全硅化物金属栅的栅功函数.通过注入p型或n型杂质,如BF2,As或P,能够将Ni全硅化物金属栅的功函数调高或调低,以分别满足pMOS管和nMOS管的要求.但是注入大剂量的As杂质会导致分层现象和EOT变大,因此As不适合用来调节Ni全硅化物金属栅的栅功函数.由于FUSI工艺会导致全硅化金属栅电容EOT减小,全硅化金属栅电容的栅极泄漏电流大于多晶硅栅电容.

关 键 词：metal gate FUSI SILICIDE 

分 类 号：TN386.1[电子电信—物理电子学]