A Novel CMOS Voltage Reference Based on Threshold Voltage Difference Between p-Type and n-Type MOSFETs  

一种新型的基于pMOS和nMOS阈值电压差的CMOS电压基准源(英文)

作　　者：孔明[1] 郭健民[1] 张科[1] 李文宏[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海201203

出　　处：《Journal of Semiconductors》2007年第10期1546-1550,共5页半导体学报（英文版）

摘　　要：A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation. The reference has been successfully implemented in a Chartered 0.35μm CMOS process. The occupied chip area is 0. 022mm^2. Measurements indicate that without trimming, the average output voltage error is 6mV at room temperature compared with the simulation result. The temperature coefficient is 180ppm/℃ in the worst case in the temperature range of 0 to 100℃ ,and the line regulation is ± 1.1%. The reference is applied in an adaptive power MOSFET driver.提出了一种新的纯MOS结构的基准电压源,它利用pMOS和nMOS的阈值电压差来抵消工艺偏差,提高了基准的精度.该电路经过Chartered0.35mm标准CMOS工艺成功流片,芯片面积为0.022mm2.测试结果表明:输出平均电压在室温下与仿真结果的绝对误差为6mV,在0～100℃范围内温度系数为180ppm/℃,电源调整率为±1.1%.该基准应用于自适应功率管驱动器中.

关 键 词：MOS-only voltage reference threshold voltage temperature coefficient line regulation 

分 类 号：TN432[电子电信—微电子学与固体电子学]