高能氧化锌压敏元件研究  

Research on ZnO varistor with high capability

作　　者：章会良[1] 曹全喜[1] 宋建军[1] 刘男[2] 

机构地区：[1]西安电子科技大学技术物理学院,陕西西安710071 [2]西安电子科技大学理学院应用化学系,陕西西安710071

出　　处：《电子元件与材料》2007年第10期51-53,共3页Electronic Components And Materials

摘　　要：为了提高ZnO压敏元件的通流能力,采用化学共沉淀法制得含七种组分的复合添加剂。用此复合添加剂、ZnO、SiO2及Al(NO3)3的混合溶液,经球磨后,制成φ10mm×1mm氧化锌压敏元件。通过TEM和粒度测试,分析了复合添加剂的尺寸和晶粒的均匀性,并对元件的微区成分和性能进行了测试。结果表明:采用化学共沉淀法制备的复合添加剂粉体粒径小,在元件中的分布较传统方法均匀;用该添加剂制备的氧化锌压敏元件的2ms方波通流能力超过705J/cm3,是传统方法的两倍多。In order to improve the surge absorption capability of ZnO varistors, the powder of ZnO varistor was fabricated by blending and grinding of ZnO, SLOE, Al（NO3）3 solutions and composite additive prepared by chemical coprecipitation in seven groups, The powder was used to manufacture varistors which the size was about 10 mm in diameter and lmm in thickness. The size and grain uniformity of the composite additive were tested by TEM and granularity analysis, The performances and the components of ZnO varistor were also tested, The results show that the small size of the composite additive is prepared by chemical coprecipitation and the dispersive uniformity of the additives in ZnO varistor is better than that prepared by conventional method. Withstanding rectangular current pulse （2 ms） capability of the ZnO varistor including this doped composite additive preponderates over 705 J/cm^3 which is twice as many as that prepared by conventional method.

关 键 词：电子技术 氧化锌压敏电阻器 复合纳米添加剂 化学共沉淀法 2 ms方波通流能力 

分 类 号：TM34[电气工程—电机]