辐射对半导体霍尔器件输入电阻的影响  

Effects of Irradiation on the Input Resistance of Semiconductor Hall Transducers

作　　者：王军[1] 杨渭[1] 

机构地区：[1]中国石油大学物理科学与技术学院,东营257061

出　　处：《科学技术与工程》2007年第22期5767-5770,5780,共5页Science Technology and Engineering

基　　金：教育部高等学校骨干教师项目(K001804A)资助

摘　　要：用60Co、137Cs、90Sr-90Y放射源低剂量率对恒流激励、无磁场作用时的InSb、GaAs、Si、Ge等半导体霍尔器件进行短时辐照,测量了辐照过程中各器件输入电阻的变化。结果表明:因为位移效应所引起的辐射缺陷,三种辐照均导致各器件输入电阻增加,并与辐照时间成正比。比较相同射线、相同时间辐照所引起的输入电阻变化量,可以判定Ge器件的抗辐射能力最强,Si器件次之,InSb、GaAs器件最差。The effects of short-term irradiation with low dose rate radiant point, including ^60Co、^137Cs、^90Sr-^90Y, on the input resistance of InSb, GaAs, Si and Ge semiconductor Hall transducers, driven by constant current and not in any magnetic field, were systemically studied. The results indicated that three types of irradiation all can cause input resistance of any device to linearly increase with irradiation time because of radiation defects induced by the displacement effect. According to the changes of input same time, the anti-radiation capability of devices can be estimated resistance induced by Among these types of are Ge devices, the next are Si devices and the minimal are InSb and GaAs devices .

关 键 词：辐照 半导体霍尔器件 输入电阻 抗辐射能力 

分 类 号：TN382[电子电信—物理电子学]